DocumentCode :
3024250
Title :
Emission Characteristics of InGaN/GaN Vertical-Cavity Surface-Emitting Lasers
Author :
Chu, Jung-Tang ; Lu, Tien-Chang ; Kuo, Hao-Chung ; Wang, Shing-Chung
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
Lasing characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers were investigated. The laser emission showed single and multiple spots emission patterns with spectral and spatial variation under different pumping conditions.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; surface emitting lasers; wide band gap semiconductors; InGaN-GaN; emission characteristics; spots emission patterns; vertical-cavity surface-emitting lasers; Apertures; Gallium nitride; Indium; Laser excitation; Optical pumping; Pump lasers; Quantum well devices; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4453603
Filename :
4453603
Link To Document :
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