DocumentCode :
3024384
Title :
Fabrication of a low power CMOS-compatible ZnO nanocomb-based gas sensor
Author :
Pan, Xiaofang ; Zhao, Xiaojin ; Bermak, Amine ; Fan, Zhiyong
Author_Institution :
Dept. of ECE, Hong Kong Univ. of Sci. & Technol., Kowloon, China
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
3270
Lastpage :
3273
Abstract :
In this paper, a novel CMOS-compatible ZnO nanocomb-based gas sensor is presented. Compared with previously reported implementations, the proposed ZnO nanocombs feature multiple conducting channels and much larger effective sensing area, both of which result in dramatically improved sensitivity (6.54 for 250 ppm CO), response time (3.4 min) and recovery time (0.24 min). In addition, by operating the gas sensor at room temperature, additional power-hungry heating components inevitable in traditional implementations are completely removed. This not only leads to low power consumption, but also avoids the high-temperature-caused reliability degradation when integrated with CMOS circuitry.
Keywords :
CMOS integrated circuits; II-VI semiconductors; gas sensors; low-power electronics; nanostructured materials; semiconductor device reliability; sensitivity; wide band gap semiconductors; zinc compounds; CMOS circuitry; ZnO; conducting channels; gas sensor; high temperature-caused reliability degradation; low power CMOS-compatible ZnO nanocomb; power-hungry heating components; recovery time; response time; sensitivity; Electrodes; Gas detectors; Sensitivity; Substrates; Temperature sensors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
ISSN :
0271-4302
Print_ISBN :
978-1-4673-0218-0
Type :
conf
DOI :
10.1109/ISCAS.2012.6272023
Filename :
6272023
Link To Document :
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