DocumentCode
3024429
Title
Accurate modeling of low actuation voltage RFMEMS switches using artificial neural networks
Author
Pak, Amin ; Mafinejad, Yasser ; Kouzani, Abbas ; Nabovati, Hooman ; Mafinezhad, Khalil
Author_Institution
Sadjad Inst. for Higher Educ., Mashhad, Iran
fYear
2012
fDate
20-23 May 2012
Firstpage
3282
Lastpage
3284
Abstract
This paper presents a fast and accurate method for extracting the scattering parameters of a RF MEMS switch by using its essential parameters. A neural network is developed for parametric modeling of the switch. The essential parameters of the switch are analyzed in terms of its return loss and isolation with variation of its geometrical component values. Simulation results show that the proposed approach can be used to accurately model the RF characteristics of RF-MEMS switches. The results show good agreement between the neural network prediction and electromagnetic simulations.
Keywords
microswitches; neural nets; radiofrequency integrated circuits; RF-MEMS switches; artificial neural networks; electromagnetic simulations; geometrical component values; low actuation voltage; neural network prediction; parameter extraction; scattering parameter; Artificial neural networks; Micromechanical devices; Microswitches; Microwave circuits; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6272026
Filename
6272026
Link To Document