Title :
Semi-insulating InP through wafer annealing
Author :
Oda, O. ; Uchida, M. ; Kainosho, K. ; Ohta, M. ; Warashina, M. ; Tajima, M.
Author_Institution :
Mater. & Components Labs., Japan Energy Corp., Saitama, Japan
Abstract :
Recent investigations in various affiliations opened a possibility for preparation of semi-insulating (SI) InP with extremely low Fe concentrations through wafer annealing procedures. In this paper, these investigations are reviewed including the latest data on 75 mm diameter SI InP, and possible mechanisms of the SI behavior after wafer annealing are discussed
Keywords :
III-V semiconductors; annealing; indium compounds; 75 mm; Fe concentration; InP; semi-insulating InP; wafer annealing; Annealing; Chromium; Contamination; Furnaces; HEMTs; Indium phosphide; Iron; Laboratories; MODFETs; Optical materials;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600179
