Title :
Very low-threshold-current-density 1.34-μm gainnas/gaas quantum well lasers with a quaternary-barrier structure
Author :
Jin, C.Y. ; Liu, H.Y. ; Zhang, S.Y. ; Airey, R. ; Hopkinson, M.
Author_Institution :
Univ. of Sheffield, Sheffield
Abstract :
A quaternary-barrier structure is employed to reduce the strain at the interface between the quantum well and barriers for GaInNAs/GaAs materials. A very-low room-temperature threshold current density of 178 A/cm2 is demonstrated with 1.34-μm GaInNAs/GaAs lasers.
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; optical materials; quantum well lasers; GaInNAs-GaAs; quantum well laser; quaternary-barrier structure; threshold-current-density; wavelength 1.34 μm; Capacitive sensors; Gallium arsenide; Lattices; Nitrogen; Optical fiber communication; Optical materials; Power generation; Quantum well lasers; Radiative recombination; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453619
