• DocumentCode
    3024617
  • Title

    Very low-threshold-current-density 1.34-μm gainnas/gaas quantum well lasers with a quaternary-barrier structure

  • Author

    Jin, C.Y. ; Liu, H.Y. ; Zhang, S.Y. ; Airey, R. ; Hopkinson, M.

  • Author_Institution
    Univ. of Sheffield, Sheffield
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A quaternary-barrier structure is employed to reduce the strain at the interface between the quantum well and barriers for GaInNAs/GaAs materials. A very-low room-temperature threshold current density of 178 A/cm2 is demonstrated with 1.34-μm GaInNAs/GaAs lasers.
  • Keywords
    III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; optical materials; quantum well lasers; GaInNAs-GaAs; quantum well laser; quaternary-barrier structure; threshold-current-density; wavelength 1.34 μm; Capacitive sensors; Gallium arsenide; Lattices; Nitrogen; Optical fiber communication; Optical materials; Power generation; Quantum well lasers; Radiative recombination; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453619
  • Filename
    4453619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3024617