DocumentCode
3025042
Title
Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode
Author
Boucherif, Abderraouf ; Ban, Dayan ; Luo, Hui ; Dupont, Emmanuel ; Liu, H.C. ; Wasilewski, Z.R. ; Paltiel, Yossi
Author_Institution
Univ. of Waterloo, Waterloo
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We report the fabrication and experimental results of a midinfrared optical up-converter that was fabricated using wafer fusion technology. Midinfrared optical upconversion from 4.0 to 0.84 mum was demonstrated at temperatures up to 200 K.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; photodetectors; GaAs light emitting diode; InAsSb photodetector; InAsSb-GaAs; midinfrared optical up-converter; midinfrared optical upconversion; wafer fusion technology; Cameras; Gallium arsenide; Infrared detectors; Integrated optics; Light emitting diodes; Optical imaging; Photodetectors; Photodiodes; Stimulated emission; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4453634
Filename
4453634
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