Crystal growth of bulk InP from magnetically stabilized melts with a cusped field

Author

Bryant, George G. ; Bliss, David F. ; Leahy, Darin ; Lancto, Robery ; Ma, Nancy ; Walker, John

Author_Institution

Rome Lab., Hanscom AFB, MA, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

416

Lastpage

419

Abstract

Crystal growth of bulk InP using a cusped magnetic field has been investigated. A vertical arrangement of two Helmholz coils with opposite polarity provides the configuration for a cusped field. A comparison between growth of InP under an aligned axial field and a cusped field shows that turbulent melt flow is damped by the former but not by the latter. By use of IR transmission images, it was shown that each magnetic configuration has a different effect on interface shape, facet formation, and striation frequency. Although the cusped field produced a crystal with a flatter melt-solid interface, overall process control was enhanced only by growth from an axial magnetic field

Keywords

III-V semiconductors; crystal growth from melt; indium compounds; magnetic field effects; optical microscopy; process control; semiconductor growth; Helmholz coils; IR micrographs; IR transmission images; InP; aligned axial field; bulk InP; crystal growth; cusped magnetic field; facet formation; interface shape; magnetically stabilized melts; melt-solid interface; process control; striation frequency; turbulent melt flow damping; vertical arrangement; Coils; Crystals; Indium phosphide; Laboratories; Magnetic field induced strain; Magnetic fields; Magnetosphere; Process control; Silicon compounds; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600182

Filename

600182