• DocumentCode
    3025147
  • Title

    Physical effects from etching parameters of the Bragg Grating Waveguide fabricated on porous silicon nanostructure

  • Author

    Radzi, A.A.S.M. ; Yusop, S.F.M. ; Ikhsan, N.I. ; Rusop, M. ; Abdullah, Saad

  • Author_Institution
    Fac. of Appl. Sci., Univ. Teknol. MARA, Shah Alam, Malaysia
  • fYear
    2012
  • fDate
    19-21 Sept. 2012
  • Firstpage
    399
  • Lastpage
    402
  • Abstract
    Multilayer structure of Bragg Grating Waveguide (BGW), porous silicon (PSi)-based was fabricated and characterized. The BGW was directly etched on a PSi-based planar waveguide. Adjustment of parameters for the electrochemical process will let the realization of multilayer properties of PSi. Fabricated BGW structure depends on thickness and layers of porous structure, and also average pore size. It is well known from previous study that the modulation of multilayer PSi much affected by the HF concentration of electrolyte, etching time, and current density applied during the electrochemical etching process. Surface homogeneity and layer uniformity are also the scope of study and both are much relying on those factors. The average refractive index, n and pore sizes for the multilayer structure were determined and the comparison of the results based from the study was shown. Fabricated BGW on PSi is now intensely investigated for application as an optical sensor for chemical substances.
  • Keywords
    Bragg gratings; etching; optical planar waveguides; Bragg grating waveguide; PSi-based planar waveguide; current density; electrochemical process; electrolyte; etching parameters; etching time; layer uniformity; multilayer structure; porous silicon nanostructure; surface homogeneity; Etching; Nonhomogeneous media; Optical refraction; Optical sensors; Optical variables control; Refractive index; Silicon; Bragg grating waveguide; Porous silicon; multilayer; optical sensor; refractive index;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-2395-6
  • Electronic_ISBN
    978-1-4673-2394-9
  • Type

    conf

  • DOI
    10.1109/SMElec.2012.6417171
  • Filename
    6417171