Title :
A GIDL free tunneling gate driver for a low power non-volatile memory array
Author :
Dagan, Hadar ; Teman, Adam ; Fish, Alexander ; Pikhay, Evgeny ; Dayan, Vladislav ; Roizin, Y.
Author_Institution :
Low Power Circuits & Syst. Lab. (LPC&S), Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
Abstract :
A recently presented single-poly non-volatile C-Flash memory bitcell provides an ultra-low power low cost option for embedded RFID design. This cell requires the application of a 10V potential difference between the cell´s control lines for program and erase operations. Providing the required voltages includes several challenges in the design of the voltage driver, such as the elimination of Gate Induced Drain Leakage (GIDL) currents. In this paper, we present a voltage driver architecture that utilizes novel techniques to overcome the power consumption problems during high voltage propagation. This driver was implemented in the TowerJazz 0.18μm CMOS technology, providing the required functionality with a low static-power figure of 34.6pW.
Keywords :
CMOS integrated circuits; driver circuits; flash memories; leakage currents; low-power electronics; radiofrequency identification; random-access storage; GIDL free tunneling gate driver; TowerJazz CMOS technology; cell control lines; embedded RFID design; erase operations; gate induced drain leakage current elimination; low power nonvolatile memory array; power consumption problems; program operations; single-poly nonvolatile C-flash memory bitcell; size 0.18 mum; ultra-low power low cost option; voltage driver; voltage propagation; Arrays; Logic gates; Microprocessors; Nonvolatile memory; Standards; Tunneling;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6272062
