DocumentCode
3025363
Title
Fabrication of Single Crystal Silicon Nanowire Bridge
Author
Park, Kyung Tea ; Kim, Hyeon Cheol ; Chun, Kukjin
Author_Institution
Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
fYear
2010
fDate
18-25 July 2010
Firstpage
246
Lastpage
248
Abstract
This paper presents the fabrication method of single crystal silicon nanowire, which is easy to control the size and position of nanowire. Therefore it can be used in various sensors like a pressure sensor, a tactile sensor and a microphone. Spacer, which is created by two cycles of Deposition & Etch process, is used as the dry etch mask, and beyond 100 nm nanowire bridges are fabricated. This paper provides the easy way to make sensors using good piezoresistivity of single crystal silicon nanowire. The resistance of nanowire measured as 4.5 MΩ.
Keywords
electric resistance; elemental semiconductors; etching; nanofabrication; nanosensors; nanowires; piezoresistive devices; semiconductor quantum wires; silicon; Si; dry etch mask; etch process; fabrication method; microphone; nanowire resistance; piezoresistivity; pressure sensor; resistance 4.5 Mohm; single crystal silicon nanowire bridge; spacer; tactile sensor; Bridge circuits; Bridges; Crystals; Fabrication; Lithography; Piezoresistance; Silicon; Piezoresister effect; Piezoresistive Sensors; Silicon Nanowire Bridge; Single Crystal Silicon Nanowire; Spacer lithography;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensor Device Technologies and Applications (SENSORDEVICES), 2010 First International Conference on
Conference_Location
Venice
Print_ISBN
978-1-4244-7474-5
Type
conf
DOI
10.1109/SENSORDEVICES.2010.53
Filename
5632177
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