• DocumentCode
    3025363
  • Title

    Fabrication of Single Crystal Silicon Nanowire Bridge

  • Author

    Park, Kyung Tea ; Kim, Hyeon Cheol ; Chun, Kukjin

  • Author_Institution
    Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2010
  • fDate
    18-25 July 2010
  • Firstpage
    246
  • Lastpage
    248
  • Abstract
    This paper presents the fabrication method of single crystal silicon nanowire, which is easy to control the size and position of nanowire. Therefore it can be used in various sensors like a pressure sensor, a tactile sensor and a microphone. Spacer, which is created by two cycles of Deposition & Etch process, is used as the dry etch mask, and beyond 100 nm nanowire bridges are fabricated. This paper provides the easy way to make sensors using good piezoresistivity of single crystal silicon nanowire. The resistance of nanowire measured as 4.5 MΩ.
  • Keywords
    electric resistance; elemental semiconductors; etching; nanofabrication; nanosensors; nanowires; piezoresistive devices; semiconductor quantum wires; silicon; Si; dry etch mask; etch process; fabrication method; microphone; nanowire resistance; piezoresistivity; pressure sensor; resistance 4.5 Mohm; single crystal silicon nanowire bridge; spacer; tactile sensor; Bridge circuits; Bridges; Crystals; Fabrication; Lithography; Piezoresistance; Silicon; Piezoresister effect; Piezoresistive Sensors; Silicon Nanowire Bridge; Single Crystal Silicon Nanowire; Spacer lithography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensor Device Technologies and Applications (SENSORDEVICES), 2010 First International Conference on
  • Conference_Location
    Venice
  • Print_ISBN
    978-1-4244-7474-5
  • Type

    conf

  • DOI
    10.1109/SENSORDEVICES.2010.53
  • Filename
    5632177