A new method to stabilize high frequency high gain CMOS LNA

Author

Lavasani, Seyed Hossein Miri ; Kiaei, Sayfe

Author_Institution

Telecommun. Res. Center, Arizona State Univ., Tempe, AZ, USA

Volume

3

fYear

2003

fDate

14-17 Dec. 2003

Firstpage

982

Abstract

A new technique to improve stability of high frequency high gain CMOS Low Noise Amplifiers (LNA) has been introduced. A 0.18 μm CMOS LNA for WLAN 5.2 GHz is designed and its performance is compared to typical CMOS cascode LNA for the same frequency. New filter architecture at load has caused a sharp notch in "in-band" S12 of the LNA. This method significantly increases the stability of the LNA while benefits from the high forward gain (16.6 dB) and low noise figure (1.4 dB) of the cascode topology. New LNA shows input IP3 of 0.6dBm while consumes 9mA out of 1.8V supply voltage.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; circuit stability; equivalent circuits; field effect MMIC; integrated circuit noise; wireless LAN; 5.2 GHz; CMOS low noise amplifiers; WLAN; cascode topology; common source amplifier; equivalent circuit; high frequency LNA; high gain LNA; inductive source degeneration; CMOS process; CMOS technology; Circuit stability; Filtering; Frequency; Impedance; Noise figure; Student members; Topology; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on

Print_ISBN

0-7803-8163-7

Type

conf

DOI

10.1109/ICECS.2003.1301673

Filename

1301673