DocumentCode :
3025495
Title :
A new method to stabilize high frequency high gain CMOS LNA
Author :
Lavasani, Seyed Hossein Miri ; Kiaei, Sayfe
Author_Institution :
Telecommun. Res. Center, Arizona State Univ., Tempe, AZ, USA
Volume :
3
fYear :
2003
fDate :
14-17 Dec. 2003
Firstpage :
982
Abstract :
A new technique to improve stability of high frequency high gain CMOS Low Noise Amplifiers (LNA) has been introduced. A 0.18 μm CMOS LNA for WLAN 5.2 GHz is designed and its performance is compared to typical CMOS cascode LNA for the same frequency. New filter architecture at load has caused a sharp notch in "in-band" S12 of the LNA. This method significantly increases the stability of the LNA while benefits from the high forward gain (16.6 dB) and low noise figure (1.4 dB) of the cascode topology. New LNA shows input IP3 of 0.6dBm while consumes 9mA out of 1.8V supply voltage.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; circuit stability; equivalent circuits; field effect MMIC; integrated circuit noise; wireless LAN; 5.2 GHz; CMOS low noise amplifiers; WLAN; cascode topology; common source amplifier; equivalent circuit; high frequency LNA; high gain LNA; inductive source degeneration; CMOS process; CMOS technology; Circuit stability; Filtering; Frequency; Impedance; Noise figure; Student members; Topology; USA Councils;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on
Print_ISBN :
0-7803-8163-7
Type :
conf
DOI :
10.1109/ICECS.2003.1301673
Filename :
1301673
Link To Document :
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