• DocumentCode
    3025711
  • Title

    Light Emitting Diodes with Extremely High Extraction-Efficiency for Electroluminescence Refrigeration

  • Author

    Yu, S.Q. ; Rider, N. ; Ding, D. ; Wang, J.-B. ; Johnson, S.R. ; Zhang, Y.H.

  • Author_Institution
    Arizona State Univ., Tempe
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    InGaAs light emitting diodes with extremely high light extraction efficiency are fabricated by monolithically integrating the light emitting region with a suspended GaAs hemispherical lens. This design is being developed for electroluminescence refrigeration applications.
  • Keywords
    III-V semiconductors; electroluminescence; electroluminescent devices; gallium arsenide; indium compounds; light emitting diodes; InGaAs; electroluminescence refrigeration; light emitting diodes; suspended hemispherical lens; Electroluminescence; Etching; Fabrication; Gallium arsenide; Indium gallium arsenide; Lenses; Light emitting diodes; Luminescence; Refrigeration; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4453668
  • Filename
    4453668
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3025711