Structural and optical characterization of InP/InGaAsP distributed Bragg reflectors grown by CBE

Author

Behrend, J. ; Rudra, A. ; Sagalowicz, L. ; Berseth, C.-A. ; Carlin, J.-F. ; Schoenberg, A. ; Jouneau, P.-H. ; Kapon, E.

Author_Institution

Inst. de Micro- et Optoelectron., Ecole Polytech. Federale de Lausanne, Switzerland

fYear

1997

fDate

11-15 May 1997

Firstpage

428

Lastpage

431

Abstract

High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Lasers (VCSELs) for long wavelength (1.55 μm) applications. Because of the small index difference between InP and InGaAsP, more than 30 periods are needed to obtain reflectivities above 99%, which makes the crystal growth technique challenging. In this paper, we present the structural and optical characteristics of such DBRs grown by Chemical Beam Epitaxy (CBE) at high growth rates that comply with the requirements for integration in long wavelength VCSELs

Keywords

III-V semiconductors; X-ray diffraction; atomic force microscopy; chemical beam epitaxial growth; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optics; laser mirrors; quantum well lasers; reflectivity; scanning electron microscopy; semiconductor growth; surface emitting lasers; 1.55 mum; AFM; CBE growth; InP-InGaAsP; InP/InGaAsP distributed Bragg reflectors; TEM; VCSELs; XRD; integration requirements; long wavelength applications; optical characterization; reflectivity mapping; structural characterization; Chemicals; Distributed Bragg reflectors; Indium phosphide; Integrated optics; Optical surface waves; Reflectivity; Stimulated emission; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600185

Filename

600185