• DocumentCode
    3025881
  • Title

    Modeling laterally-contacted nipi-diode radioisotope batteries

  • Author

    Cress, Cory D. ; Landi, Brian J. ; Raffaelle, Ryne P.

  • Author_Institution
    Rochester Inst. of Technol., Rochester, NY
  • fYear
    2008
  • fDate
    2-2 May 2008
  • Firstpage
    1
  • Lastpage
    8
  • Abstract
    A framework for modeling the power generation of laterally-contacted n-type / intrinsic / p-type / intrinsic (nipi) diodes coupled with an alpha-particle radioisotope source is developed. The framework consists of two main parts, the alpha-particle energy deposition profile (ADEP) and a lumped parameter equivalent circuit model describing the nipi device operation. Experimental measurements are used to verify the ADEP modeling approach which determines the spatially varying energy deposited within the device. Using these results, nipi-diode radioisotope batteries are simulated and the affects of the number of junctions, the thickness of the junction, and the alpha-particle flux on output voltage and power are investigated. The modeling results indicate that a 1 cm2 bi-layer device (consisting of one source and two adjacent nipi-diodes) with a source activity of 300 mCi can reach a power output of 2 mW.
  • Keywords
    III-V semiconductors; alpha-particle sources; cells (electric); equivalent circuits; indium compounds; semiconductor device models; semiconductor diodes; InGaP; alpha-particle particle energy deposition profile; alpha-particle radioisotope source; direct conversion radioisotope batteries; displacement damage dose profile; laterally-contacted nipi-diode; lumped parameter equivalent circuit model; nipi-diode radioisotope batteries; photovoltaic cells; photovoltaic energy harvesting systems; Absorption; Batteries; Circuit simulation; Equivalent circuits; Isotopes; Photovoltaic systems; Radioactive materials; Semiconductor diodes; Solar power generation; Voltage; InGaP Photovoltaic; Micropower Devices; NIEL; Radioisotope Batteries; SRIM; displacement damage dose profile;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Systems, Applications and Technology Conference, 2008 IEEE Long Island
  • Conference_Location
    Farmingdale, NY
  • Print_ISBN
    978-1-4244-1731-5
  • Electronic_ISBN
    978-1-4244-1732-2
  • Type

    conf

  • DOI
    10.1109/LISAT.2008.4638957
  • Filename
    4638957