Title :
Effect of damaged-chip infrared emitter package on Ge substrate
Author :
Wei Ching Liew ; Devarajan, Mutharasu
Author_Institution :
Nano-Optoelectron. Res. & Technol. Lab. (NOR-Lab.), Univ. of Sci. Malaysia (USM), Minden, Malaysia
Abstract :
Die cracking is the occurrence of fracture(s) in or on any part of the die of a semiconductor device. Failure caused by die cracking is one of the major concerns in packaging design and reliability. In this paper, fracture is inflicted onto the chip of a few units of p-Ge infrared emitting diode (IRED) package. Failure analysis such as curve tracing, decapsulation and visual inspection as well as SEM and EDX was performed on the units to characterize the fracture pattern and size. The results show dependence of the current-voltage (I-V) characteristic on the severity of the fracture inflicted onto the chip.
Keywords :
X-ray chemical analysis; electronics packaging; elemental semiconductors; failure analysis; fracture; germanium; light emitting diodes; scanning electron microscopy; EDX; Ge; SEM; current-voltage characteristic; damaged-chip infrared emitter package effect; decapsulation; failure analysis; fracture pattern; fracture size; germanium substrate; p-Ge infrared emitting diode package; visual inspection; Degradation; Failure analysis; Light emitting diodes; Materials; Microscopy; Reliability; Resistance;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417202
