DocumentCode :
3026011
Title :
A three-stage power amplifier for WiMedia Ultra-Wideband applications
Author :
Zi-Yi Lam ; Yun-Fen Yong ; Sew-Kin Wong ; Chee-Pun Ooi
Author_Institution :
Fac. of Eng. (FOE), Multimedia Univ., Cyberjaya, Malaysia
fYear :
2012
fDate :
19-21 Sept. 2012
Firstpage :
543
Lastpage :
546
Abstract :
A three-stage 0.18μm CMOS power amplifier (PA) targeted for 3.1 to 4.8 GHz WiMedia Ultra-Wideband (UWB) system is discussed in this paper. The first and the last stage of the proposed PA are the conventional common source (CS) inductive degeneration while the inter-stage is a common gate (CG) structure with LC matching components. With careful optimization, the inter-stage CG and LC matching components enhances the gain of the amplifier over a wideband range while maintaining a reasonable output power of the proposed PA. Offchip LC components are used to improve the overall input and output return losses of the proposed PA. The proposed PA has a simulated maximum power gain of 19.3 dB, minimum input return loss of 19.7 dB, maximum output return loss of 8.5 dB, reverse isolation of at least 36 dB, maximum output 1 dB gain compression of 10 dBm and power efficiency of more than 30 %, while dissipating a DC power of 20 mW from a 1.5 V supply. Simulation results gathered in this work can serve as a guideline for wideband PAs design, especially in radio frequency (RF) transmitter for mobile devices and consumer products.
Keywords :
CMOS analogue integrated circuits; circuit optimisation; microwave power amplifiers; CMOS power amplifier; LC matching component; WiMedia ultrawideband application; WiMedia ultrawideband system; common source inductive degeneration; consumer product; dissipattion; gain compression; gate structure; inter-stage CG matching component; mobile device; optimization; power 20 mW; power efficiency; radio frequency transmitter; size 0.18 mum; three-stage power amplifier; voltage 1.5 V; wideband PA design; CMOS integrated circuits; Gain; Inductors; Integrated circuit modeling; Power amplifiers; Semiconductor device modeling; Wideband;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
Type :
conf
DOI :
10.1109/SMElec.2012.6417204
Filename :
6417204
Link To Document :
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