Title :
A fully integrated 2.45 GHz 0.25μm CMOS power amplifier
Author :
Cijvat, Ellie ; Sjoland, Henrik
Author_Institution :
Dept. of Electroscience, Lund Univ., Sweden
Abstract :
A fully integrated differential class-AB power amplifier has been designed in a 0.25um CMOS technology. It is intended for medium output power ranges such as Bluetooth class I, and has an operating frequency of 2.45GHz. By using two parallel output stages that can be switched on or off, a high efficiency can be achieved for both high and low output power levels. The simulated maximum output power is 22.7 dBm, while the maximum power-added efficiency is 22%.
Keywords :
Bluetooth; CMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; differential amplifiers; field effect MMIC; impedance matching; radio transmitters; 2.45 GHz; Bluetooth class I; CMOS technology; differential class-AB power amplifier; fully integrated power amplifier; high efficiency; impedance transformation; matching network; maximum output power; medium output power ranges; parallel output stages; CMOS technology; FETs; Impedance; Inductors; Knee; Parasitic capacitance; Power amplifiers; Power generation; Switches; Voltage;
Conference_Titel :
Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on
Print_ISBN :
0-7803-8163-7
DOI :
10.1109/ICECS.2003.1301701
