Title :
Single phase transducer consisting of AlGaN/GaN
Author :
Hohkawa, Kohji ; Oshiyama, Satoshi ; Terao, Yuji ; Koh, Keishin ; Nishimura, Kazumi ; Shigekawa, Naoteru
Author_Institution :
Fac. of Eng., Kanagawa Inst. of Technol., Atsugi
Abstract :
2 DEG has effective for realize functional device because it could be controlled by applied electric fields, but it has relatively poor conductive characteristics compared to the metal electrodes. In this paper, we have studied possibility of 2 DEG electrodes as the buried electrode for the single phase transducer, which would be suited for realizing high speed device. We have proposed new single phase transducers using 2 DEG electrode and experimentally verified its performance.
Keywords :
III-V semiconductors; aluminium compounds; surface acoustic wave transducers; two-dimensional electron gas; wide band gap semiconductors; 2 DEG electrodes; 2D electron gas; AlGaN-GaN; conductive characteristic; functional SAW device; high speed device; metal electrode; single phase transducer; Aluminum gallium nitride; Compressive stress; Electrodes; Electrons; Frequency; Gallium nitride; Piezoelectric films; Surface acoustic waves; Thermal stresses; Transducers; AlGaN / GaN 2 DEG; Switching operation; component; f-SAW; single phase transducer;
Conference_Titel :
Ultrasonics Symposium, 2008. IUS 2008. IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2428-3
Electronic_ISBN :
978-1-4244-2480-1
DOI :
10.1109/ULTSYM.2008.0475
