Title :
Benefits and limitations in barrier design in InAsP/GaInP strain-balanced MQWs for improving the 1.3 μm waveguide modulator performance
Author :
Mei, X.B. ; Loi, K.K. ; Chang, W.S.C. ; Tu, C.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
We have investigated the limitations in the barrier design for InAsP/GaInP strain-balanced multiple quantum wells (MQWs) by measuring double-crystal X-ray rocking curves and room-temperature photoluminescence. We show that in thin-barrier (~70 Å) structures with 8 MQWs, zero net strain can not be achieved due to the relaxation of the GaInP barriers caused by higher tensile strain. The net strain has to be designed at the compressive side and within the range of -0.26% to -0.54% to obtain high structural stability. Photocurrent spectra show that with 70 Å-thick barriers, the MQW region is 35% more absorptive than with 115 Å-thick barriers
Keywords :
III-V semiconductors; X-ray diffraction; electro-optical modulation; gallium compounds; indium compounds; internal stresses; mechanical stability; optical waveguide components; photoluminescence; semiconductor quantum wells; stress relaxation; 1.3 mum; 115 angstrom; 70 angstrom; GaInP barrier relaxation; InAsP-GaInP; InAsP/GaInP strain-balanced MQWs; barrier design; compressive strain; double-crystal X-ray rocking curves; photocurrent spectra; room-temperature photoluminescence; structural stability; tensile strain; thin-barrier structures; waveguide modulator performance; Capacitive sensors; Indium phosphide; Laser stability; Molecular beam epitaxial growth; Optical modulation; Optical waveguides; Quantum well devices; Structural engineering; Temperature; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600187
