DocumentCode
3026369
Title
A 10MHz BW 78dB DR CT ΣΔ modulator with novel switched high linearity VCO-based quantizer
Author
He, Tao ; Jiang, Yang ; Du, Yun ; Sin, Sai-Weng ; U, Seng-Pan ; Martins, Rui P.
Author_Institution
State-Key Lab. of Analog & Mixed Signal VLSI, Univ. of Macau, Macao, China
fYear
2012
fDate
20-23 May 2012
Firstpage
65
Lastpage
68
Abstract
A novel structure of VCO-based quantizer for CT ΣΔ modulator is presented which can significantly improve the VCO linearity. Compared to the traditional methods, the proposed structure uses only one VCO in the system and it also maintains the intrinsic Dynamic Element Matching (DEM) function of the VCO-based quantizer. A first order CT ΣΔ modulator with the proposed quantizer is designed and simulated in a 65nm CMOS process. The DAC of the ΣΔ modulator is optimized, which can also save half of the DAC cells. The performance of the modulator can reach 69/67 dB SNR/SNDR and a dynamic range of 78 dB with a bandwidth of 10MHz at 1V supply voltage.
Keywords
CMOS integrated circuits; linearisation techniques; quantisation (signal); sigma-delta modulation; voltage-controlled oscillators; CMOS process; VCO linearity; bandwidth 10 MHz; digital-analog converter; dynamic element matching function; signma-delta modulator; size 65 nm; switched high linearity VCO based quantizer; Bandwidth; Dynamic range; Linearity; Modulation; Switches; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location
Seoul
ISSN
0271-4302
Print_ISBN
978-1-4673-0218-0
Type
conf
DOI
10.1109/ISCAS.2012.6272116
Filename
6272116
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