DocumentCode :
3026369
Title :
A 10MHz BW 78dB DR CT ΣΔ modulator with novel switched high linearity VCO-based quantizer
Author :
He, Tao ; Jiang, Yang ; Du, Yun ; Sin, Sai-Weng ; U, Seng-Pan ; Martins, Rui P.
Author_Institution :
State-Key Lab. of Analog & Mixed Signal VLSI, Univ. of Macau, Macao, China
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
65
Lastpage :
68
Abstract :
A novel structure of VCO-based quantizer for CT ΣΔ modulator is presented which can significantly improve the VCO linearity. Compared to the traditional methods, the proposed structure uses only one VCO in the system and it also maintains the intrinsic Dynamic Element Matching (DEM) function of the VCO-based quantizer. A first order CT ΣΔ modulator with the proposed quantizer is designed and simulated in a 65nm CMOS process. The DAC of the ΣΔ modulator is optimized, which can also save half of the DAC cells. The performance of the modulator can reach 69/67 dB SNR/SNDR and a dynamic range of 78 dB with a bandwidth of 10MHz at 1V supply voltage.
Keywords :
CMOS integrated circuits; linearisation techniques; quantisation (signal); sigma-delta modulation; voltage-controlled oscillators; CMOS process; VCO linearity; bandwidth 10 MHz; digital-analog converter; dynamic element matching function; signma-delta modulator; size 65 nm; switched high linearity VCO based quantizer; Bandwidth; Dynamic range; Linearity; Modulation; Switches; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
ISSN :
0271-4302
Print_ISBN :
978-1-4673-0218-0
Type :
conf
DOI :
10.1109/ISCAS.2012.6272116
Filename :
6272116
Link To Document :
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