DocumentCode :
3026471
Title :
Lifetime mapping of Si wafers by an infrared camera [for solar cell production]
Author :
Bail, Michael ; Kentsch, Jörg ; Brendel, Rolf ; Schulz, Max
Author_Institution :
ZAE Bayern, Erlangen, Germany
fYear :
2000
fDate :
2000
Firstpage :
99
Lastpage :
103
Abstract :
The authors present a fast and contact-free method to map the effective minority carrier lifetime τeff of silicon solar cell wafers at a high spatial resolution. An infrared camera measures the infrared light absorbtion induced by optically excited free carriers. A single camera measurement yields a map of the areal density of excess minority carriers which the authors convert into a map of the effective minority carrier lifetime τeff. The infrared measurement results agree with the results of established techniques, such as microwave detected photoconductance decay and quasi steady state photoconductance lifetime measurements. The novel infrared lifetime mapping technique is sufficiently fast for in-line process control
Keywords :
carrier density; carrier lifetime; elemental semiconductors; infrared imaging; light absorption; minority carriers; optical variables measurement; semiconductor device measurement; semiconductor device testing; silicon; solar cells; Si; Si solar cell wafers; effective minority carrier lifetime; excess minority carrier density; high spatial resolution; in-line process control; infrared lifetime mapping technique; infrared light absorbtion measurement; optically excited free carriers; solar cell production; Area measurement; Cameras; Charge carrier lifetime; Density measurement; Infrared detectors; Microwave measurements; Photoconductivity; Photovoltaic cells; Silicon; Spatial resolution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
ISSN :
0160-8371
Print_ISBN :
0-7803-5772-8
Type :
conf
DOI :
10.1109/PVSC.2000.915763
Filename :
915763
Link To Document :
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