Title :
InAsP/In[Ga]P MQWs for 1.55 μm modulators grown by solid-source MBE
Author :
Guy, P. ; Farley, R.J. ; Haywood, S.K. ; Hewer, V.A. ; Hogg, J.H.C. ; David, J.P.R. ; Hopkinson, M. ; Pate, M.
Author_Institution :
Dept. of Electron. Eng., Hull Univ., UK
Abstract :
Two multi-quantum wells of nominal composition In0.45As 0.55P/InP and In0.4As0.5P/In0.95 Ga0.5P have been grown by solid source MBE. X-ray diffraction showed that neither structure was relaxed with respect to the substrate despite compressive well strain of 1.6-1.8%. Optical characterization showed narrow exciton linewidths (~20 meV FWHM) at room temperature. An absorption coefficient at the exciton peak of 21000 cm -1 was found from transmission measurements. There is also a rapid Stark shift for these 85 nm wells leading to maximum modulation at only 4-5 V for a 0.3 μm intrinsic region. These results imply that for a similar 50 period structure with a 1 μm intrinsic region a contrast ratio of 2.3 dB could be achieved at less than 20 V
Keywords :
III-V semiconductors; X-ray diffraction; absorption coefficients; electro-optical modulation; excitons; gallium compounds; indium compounds; internal stresses; molecular beam epitaxial growth; photoluminescence; quantum confined Stark effect; semiconductor growth; semiconductor quantum wells; 1.55 mum; 21000 cm-1; 4 to 5 V; 85 nm; In0.45As0.55P-InP; In0.4As0.5P-In0.95Ga0.5 P; InAsP/In(Ga)P MQWs; InP; X-ray diffraction; absorption coefficient; compressive well strain; contrast ratio; maximum modulation; modulators; multi-quantum wells; narrow exciton linewidths; optical characterization; photocurrent spectra; photoluminescence spectra; quantum confined Stark shift; rapid Stark shift; solid-source MBE; transmission measurements; Capacitive sensors; Electromagnetic wave absorption; Excitons; Indium phosphide; Optical diffraction; Optical modulation; Quantum well devices; Solids; Temperature; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600188
