Title :
Effects of pn-junctions bordering on surfaces investigated by means of 2D-modeling
Author :
Kühn, Ralph ; Fath, Peter ; Bucher, Emst
Author_Institution :
Fakultat fur Phys., Konstanz Univ., Germany
Abstract :
Several new solar cell designs, among them the emitter wrap through (EWT) and the POWER solar cell, suffer from reduced fill factors. These cells have interdigitated p- and n-type regions. At the margin of these regions, the p-n junction borders on the surface causing additional recombination. We investigate by means of two-dimensional modeling the recombination mechanisms occurring in such device regions, and we give an experimental example. It is shown that a poor quality of the surface passivation near to where the pn-junction borders, is mainly responsible for the observed losses in fill factor and open-circuit voltages
Keywords :
losses; p-n junctions; passivation; semiconductor device models; solar cells; surface recombination; 2D-modeling; POWER solar cell; emitter wrap through; fill factor losses; interdigitated n-type regions; interdigitated p-type regions; open-circuit voltage losses; p-n junction; pn-junctions; poor quality surface passivation; recombination; reduced fill factors; solar cell designs; Charge carrier processes; Charge carriers; Crystallization; Energy states; Photovoltaic cells; Physics; Radiative recombination; Spontaneous emission; Thyristors; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915768
