DocumentCode
3026609
Title
Structural study and sensitivity measurements of ZnO based ammonia (NH3 ) sensor
Author
Ahmad, Sahar ; Sin, N.D.M. ; Mamat, M.H. ; Salina, M. ; Berhan, M.N. ; Rusop, M.
Author_Institution
Fac. of Mech. Eng., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
fYear
2012
fDate
19-21 Sept. 2012
Firstpage
682
Lastpage
685
Abstract
Zinc Oxide (ZnO) thin films were prepared on thermally oxidized SiO2 by radio frequency (RF) magnetron sputtering at various substrate temperature ranging from room temperature (25°C) to 500°C. The surface morphology and crystallinity were analyzed by field emission scanning electron microscopy (FESEM) and X-Ray Diffractometer (XRD) respectively. The grain size measured by FESEM is increasing with the increased of substrate temperature used. All films grown were c-axis oriented and the film deposited at 300°C exhibit the highest crystallinity. The film deposited at room temperature exhibit the highest sensitivity due the smallest grain size and the highest surface to volume ratio.
Keywords
III-V semiconductors; X-ray diffraction; ammonia; field emission electron microscopy; gas sensors; grain size; scanning electron microscopy; semiconductor counters; semiconductor thin films; sensitivity analysis; surface morphology; wide band gap semiconductors; zinc compounds; FESEM; X-ray diffractometer; XRD; ZnO-NH3; crystallinity; field emission scanning electron microscopy; grain size; sensitivity measurements; structural study; substrate temperature; surface morphology; surface-to-volume ratio; temperature 25 degC to 500 degC; temperature 293 K to 298 K; zinc oxide thin films; Films; Sensitivity; Sputtering; Substrates; Temperature measurement; Temperature sensors; Zinc oxide; Magnetron sputtering; Sensitivity; Structural properties; Substrate temperature; ZnO;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4673-2395-6
Electronic_ISBN
978-1-4673-2394-9
Type
conf
DOI
10.1109/SMElec.2012.6417235
Filename
6417235
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