Title :
Structural study and sensitivity measurements of ZnO based ammonia (NH3) sensor
Author :
Ahmad, Sahar ; Sin, N.D.M. ; Mamat, M.H. ; Salina, M. ; Berhan, M.N. ; Rusop, M.
Author_Institution :
Fac. of Mech. Eng., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
Abstract :
Zinc Oxide (ZnO) thin films were prepared on thermally oxidized SiO2 by radio frequency (RF) magnetron sputtering at various substrate temperature ranging from room temperature (25°C) to 500°C. The surface morphology and crystallinity were analyzed by field emission scanning electron microscopy (FESEM) and X-Ray Diffractometer (XRD) respectively. The grain size measured by FESEM is increasing with the increased of substrate temperature used. All films grown were c-axis oriented and the film deposited at 300°C exhibit the highest crystallinity. The film deposited at room temperature exhibit the highest sensitivity due the smallest grain size and the highest surface to volume ratio.
Keywords :
III-V semiconductors; X-ray diffraction; ammonia; field emission electron microscopy; gas sensors; grain size; scanning electron microscopy; semiconductor counters; semiconductor thin films; sensitivity analysis; surface morphology; wide band gap semiconductors; zinc compounds; FESEM; X-ray diffractometer; XRD; ZnO-NH3; crystallinity; field emission scanning electron microscopy; grain size; sensitivity measurements; structural study; substrate temperature; surface morphology; surface-to-volume ratio; temperature 25 degC to 500 degC; temperature 293 K to 298 K; zinc oxide thin films; Films; Sensitivity; Sputtering; Substrates; Temperature measurement; Temperature sensors; Zinc oxide; Magnetron sputtering; Sensitivity; Structural properties; Substrate temperature; ZnO;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417235
