Title :
High rate deposition of microcrystalline silicon solar cells using 13.56 MHz PECVD
Author :
Roschek, Tobias ; Repmann, Tobias ; Muller, Joachim ; Rech, Bernd ; Wagner, Heribet
Author_Institution :
Inst. of Photovoltaics, Forschungszentrum Julich GmbH, Germany
Abstract :
In this paper, the authors present microcrystalline silicon (μc-Si:H) p-i-n solar cells prepared at high deposition rates using plasma-enhanced chemical vapour deposition (PECVD) at 13.56 MHz excitation frequency. They studied the deposition regime of high RF-power PRF (40-100 W for a 150 cm2 electrode) and high deposition pressure pdep (1-11 Torr) at different silane concentrations and substrate temperatures. In this regime, the prepared i-layers were amorphous or microcrystalline depending on the deposition parameters. The shift between the two growth regimes was achieved by a variation of either deposition pressure, plasma power or silane concentration. The best μc-Si:H solar cells were prepared close to the transition to amorphous growth. A high deposition pressure was a prerequisite for obtaining high quality material at a high growth rate. The best solar cell efficiency achieved was 8.0% at 5 Å/s for a μc-Si:H single junction solar cell
Keywords :
elemental semiconductors; hydrogen; p-n junctions; plasma CVD; plasma CVD coatings; semiconductor doping; semiconductor growth; silicon; solar cells; μc-Si:H single junction solar cells; 1 to 11 torr; 13.56 MHz; 40 to 100 W; 8 percent; PECVD; Si:H; deposition parameters; deposition pressure; deposition regime; excitation frequency; growth rate; high-rate deposition; microcrystalline Si:H p-i-n solar cells; plasma power; plasma-enhanced chemical vapour deposition; silane concentration; substrate temperatures; Amorphous materials; Chemical vapor deposition; Electrodes; PIN photodiodes; Photovoltaic cells; Plasma chemistry; Plasma materials processing; Plasma temperature; Radio frequency; Silicon;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915776