Title :
Rhombohedral In2O3 thin films preparation from in metal film using Oxygen plasma
Author :
Shanmugan, S. ; Mutharasu, D. ; Kamarulazizi, I.
Abstract :
Rhombohedral (rh-In2O3) In2O3 thin films were synthesized by Oxygen plasma process of RF sputtered In metal film. The formation of (110) oriented rh-In2O3 was confirmed by XRD analysis and well matched with JCPDS File no. 73-1809. The effect of process parameters on the growth of rh-In2O3 thin film and their optical properties was studied. The observed band gap was in between 2.45 and 2.92 eV. High process power and high gas flow rate affect the growth of rh-In2O3 and its band gap considerably. FTIR spectra analysis was performed to confirm the synthesis of rh-In2O3 processed by O2 plasma. The elemental composition of processed films was studied by EDAX spectra.
Keywords :
X-ray chemical analysis; X-ray diffraction; energy gap; indium compounds; plasma applications; sputtering; thin films; EDAX spectra; FTIR spectra analysis; In2O3; JCPDS file no 73-1809; RF sputtered metal film; XRD analysis; band gap; elemental composition; gas flow rate; metal film; optical properties; oxygen plasma process; rhombohedral thin films preparation; Absorption; Indium; Optical films; Optical sensors; Photonic band gap; Plasmas;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417242
