Rhombohedral In2O3 thin films preparation from in metal film using Oxygen plasma

Author

Shanmugan, S. ; Mutharasu, D. ; Kamarulazizi, I.

fYear

2012

fDate

19-21 Sept. 2012

Firstpage

711

Lastpage

715

Abstract

Rhombohedral (rh-In₂O₃) In₂O₃ thin films were synthesized by Oxygen plasma process of RF sputtered In metal film. The formation of (110) oriented rh-In₂O₃ was confirmed by XRD analysis and well matched with JCPDS File no. 73-1809. The effect of process parameters on the growth of rh-In₂O₃ thin film and their optical properties was studied. The observed band gap was in between 2.45 and 2.92 eV. High process power and high gas flow rate affect the growth of rh-In₂O₃ and its band gap considerably. FTIR spectra analysis was performed to confirm the synthesis of rh-In₂O₃ processed by O₂ plasma. The elemental composition of processed films was studied by EDAX spectra.

Keywords

X-ray chemical analysis; X-ray diffraction; energy gap; indium compounds; plasma applications; sputtering; thin films; EDAX spectra; FTIR spectra analysis; In₂O₃; JCPDS file no 73-1809; RF sputtered metal film; XRD analysis; band gap; elemental composition; gas flow rate; metal film; optical properties; oxygen plasma process; rhombohedral thin films preparation; Absorption; Indium; Optical films; Optical sensors; Photonic band gap; Plasmas;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4673-2395-6

Electronic_ISBN

978-1-4673-2394-9

Type

conf

DOI

10.1109/SMElec.2012.6417242

Filename

6417242