• DocumentCode
    3026928
  • Title

    Next generation of industrial silicon solar cells with efficiencies above 20%

  • Author

    Hezel, R. ; Schmiga, Ch ; Metz, A.

  • Author_Institution
    Inst. fur Solarenergieforschung Hameln/Emmerthal, Germany
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    184
  • Lastpage
    187
  • Abstract
    In order to make PV an economical source of energy, cell efficiencies have to be drastically increased. A new generation of high-efficiency crystalline silicon solar cells based on the OECO (obliquely evaporated contact) technology was introduced by us, using only few, simple and environmentally benign fabrication steps. In this paper progress of the OECO solar cells is presented. This includes the superior performance of the cells under realistic illumination conditions below 1 sun and at temperatures ranging from -40°C to +80°C. For the industrial size of 10×10 cm2 record efficiencies up to 20% were achieved both on FZ-Si and on Ga-doped Cz-Si. This is the highest efficiency reported for large-area industrially feasible silicon solar cells. The custom-made construction of a 1 MW/year pilot line presently installed is outlined, demonstrating that economic and environmentally benign mass production of 20% efficient silicon solar cells is no vision any more
  • Keywords
    electrical contacts; elemental semiconductors; silicon; solar cells; vacuum deposited coatings; -40 to 80 C; 10 cm; 17.9 to 21.1 percent; Ga-doped Cz-Si; Si; Si:Ga; environmentally benign fabrication steps; float zone silicon; high-efficiency crystalline silicon solar cells; illumination conditions; industrial silicon solar cells; obliquely evaporated contact technology; solar cell efficiencies; Construction industry; Crystallization; Environmental economics; Fabrication; Lighting; Photovoltaic cells; Power generation economics; Silicon; Solar power generation; Sun;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
  • Conference_Location
    Anchorage, AK
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-5772-8
  • Type

    conf

  • DOI
    10.1109/PVSC.2000.915785
  • Filename
    915785