DocumentCode
3026928
Title
Next generation of industrial silicon solar cells with efficiencies above 20%
Author
Hezel, R. ; Schmiga, Ch ; Metz, A.
Author_Institution
Inst. fur Solarenergieforschung Hameln/Emmerthal, Germany
fYear
2000
fDate
2000
Firstpage
184
Lastpage
187
Abstract
In order to make PV an economical source of energy, cell efficiencies have to be drastically increased. A new generation of high-efficiency crystalline silicon solar cells based on the OECO (obliquely evaporated contact) technology was introduced by us, using only few, simple and environmentally benign fabrication steps. In this paper progress of the OECO solar cells is presented. This includes the superior performance of the cells under realistic illumination conditions below 1 sun and at temperatures ranging from -40°C to +80°C. For the industrial size of 10×10 cm2 record efficiencies up to 20% were achieved both on FZ-Si and on Ga-doped Cz-Si. This is the highest efficiency reported for large-area industrially feasible silicon solar cells. The custom-made construction of a 1 MW/year pilot line presently installed is outlined, demonstrating that economic and environmentally benign mass production of 20% efficient silicon solar cells is no vision any more
Keywords
electrical contacts; elemental semiconductors; silicon; solar cells; vacuum deposited coatings; -40 to 80 C; 10 cm; 17.9 to 21.1 percent; Ga-doped Cz-Si; Si; Si:Ga; environmentally benign fabrication steps; float zone silicon; high-efficiency crystalline silicon solar cells; illumination conditions; industrial silicon solar cells; obliquely evaporated contact technology; solar cell efficiencies; Construction industry; Crystallization; Environmental economics; Fabrication; Lighting; Photovoltaic cells; Power generation economics; Silicon; Solar power generation; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location
Anchorage, AK
ISSN
0160-8371
Print_ISBN
0-7803-5772-8
Type
conf
DOI
10.1109/PVSC.2000.915785
Filename
915785
Link To Document