Title :
Fabrication of AlGaN/GaN HEMTs with slant field plates by using deep-UV lithography
Author :
Ting-En Hsieh ; Lu-Che Huang ; Yueh-Chin Lin ; Chia-Hua Chang ; Huan-Chung Wang ; Chang, Edward Yi
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
In this work, AlGaN/GaN HEMTs with slant field plate have been successfully fabricated using deep-UV lithography. By using an angle exposure technique, submicron T-shaped gates with slant sidewalls were achieved. The method is simple of cost effective. The 0.6 × 100μm2 slant-field-plated AlGaN/GaN HEMT on silicon substrate exhibited a peak value of transconductance higher than 200 mS/mm and a breakdown voltage higher than 100 V. Through high-frequency measurements, the device revealed a current gain cut-off frequency (fT) of 24 GHz, a maximum oscillation frequency (fmax) of 49 GHz.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; electrical conductivity; frequency measurement; gallium compounds; high electron mobility transistors; microwave transistors; millimetre wave transistors; oscillations; ultraviolet lithography; wide band gap semiconductors; AlGaN-GaN; angle exposure technique; breakdown voltage; current gain cut-off frequency; deep-UV lithography; frequency 24 GHz; frequency 49 GHz; high-frequency measurements; maximum oscillation frequency; slant field plate; slant sidewalls; slant-field-plated HEMT fabrication; submicron T-shaped gates; transconductance; Aluminum gallium nitride; Gallium nitride; HEMTs; Lithography; Logic gates; MODFETs; Silicon;
Conference_Titel :
Semiconductor Electronics (ICSE), 2012 10th IEEE International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4673-2395-6
Electronic_ISBN :
978-1-4673-2394-9
DOI :
10.1109/SMElec.2012.6417250
