Title :
10×10 cm2 screen printed back contact cell with a selective emitter
Author :
Kress, A. ; Tolle, R. ; Bruton, T. ; Fath, P. ; Bucher, E.
Author_Institution :
Fachbereich Phys., Konstanz Univ., Germany
Abstract :
Back contact cells promise a cost reduction for the interconnection of cells to modules. The emitter wrap through concept allows in addition to combine low cost material, surface texture, a selective emitter (alkaline etch for Cz-Si respectively mechanical texturing for mc-Si) together with screen printed contacts as done in this work. The connecting holes are drilled by a laser. Emitter and base region at the cell rear are separated by a screen printable diffusion barrier. Computer simulations assisted the optimisation of the grid design especially in estimating the influence of the busbar regions to the series resistance. An efficiency of 15.8% was reached on Cz-silicon, which is the highest efficiency reported so far for a low-cost (i.e., no photolithographical steps) back contact cell. The authors obtained Jsc of 37.9 mA/cm2 and Voc of 600 mV. The internal quantum efficiency was found to be distinctly increased due to the selective emitter on the front
Keywords :
electrical contacts; elemental semiconductors; metallisation; semiconductor device measurement; semiconductor device models; semiconductor device testing; silicon; solar cells; thick film devices; thick films; 10 cm; 15.8 percent; 600 mV; Si; Si solar cells; alkaline etch; computer simulation; connecting holes; emitter wrap through concept; grid design optimisation; internal quantum efficiency; open circuit voltage; screen printable diffusion barrier; screen printed contacts; selective emitter; short-circuit current; surface texture; Circuits; Computer simulation; Contact resistance; Etching; Fingers; Hafnium; Joining processes; Silicon; Surface emitting lasers; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915792