DocumentCode :
302717
Title :
Dynamic circuits for CMOS and BiCMOS low power VLSI design
Author :
Zhu, Zheng ; Carlson, Bradley S.
Author_Institution :
Dept. of Electr. Eng., State Univ. of New York, Stony Brook, NY, USA
Volume :
4
fYear :
1996
fDate :
12-15 May 1996
Firstpage :
197
Abstract :
We present new types of circuits for dynamic logic gates in CMOS and BiCMOS technologies which use a diode to control precharge and predischarge to decrease the output voltage swing. This technique improves both delay and power dissipation compared to conventional dynamic CMOS and BiCMOS logic gates. Analysis indicates an improvement in delay and power of 50% and 26%, respectively for dynamic CMOS and 10% and 26%, respectively for dynamic BiCMOS using Vdd=1.5 V
Keywords :
BiCMOS logic circuits; CMOS logic circuits; VLSI; integrated circuit design; logic design; logic gates; 1.5 V; BiCMOS IC; CMOS IC; delay; diode; dynamic circuit; logic gate; low power VLSI design; output voltage swing; power dissipation; precharge control; predischarge; BiCMOS integrated circuits; CMOS logic circuits; CMOS technology; Capacitance; Delay; Diodes; Logic gates; Power dissipation; Very large scale integration; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Conference_Location :
Atlanta, GA
Print_ISBN :
0-7803-3073-0
Type :
conf
DOI :
10.1109/ISCAS.1996.541934
Filename :
541934
Link To Document :
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