Lateral growth of silicon films from metal solutions [for solar cells]

A new LPE technique to prepare crystalline Si film solar cells laterally on nonSi substrate was examined. The lateral growth is expected to occur continuously by shifting a temperature gradient zone formed on the substrate. Steady-state distribution of the Si film thickness and Si concentration in the solution were estimated by the calculation assuming diffusion controlled growth. The Si film grown laterally from Si-Cu solution in the experiment showed the orientation agreed with the face direction of the seed crystal. This fact strongly suggested the crucial role of the seed crystal in the growth mechanism