Title :
Resistive Switching of Al/Sol-Gel ZnO/Al Devices for Resistive Random Access Memory Applications
Author :
Deshpande, Saniya ; Nair, Vineet Vijayakrishnan
Author_Institution :
Electron. & Electr. Eng., BITS, Pilani, India
Abstract :
Unipolar resistive switching devices are investigated for non volatile memory applications in a metal-insulator-metal structure in which the insulator layer consists of sol-gel-derived zinc oxide (ZnO) films prepared by a simple spin-coating process followed by thermal annealing. A high off-to-on resistance ratio (>102) is demonstrated. The influence of device area on the device is studied to suggest a mechanism for the resistive switching. The effect of annealing temperature on crystallinity and thus switching behavior is studied. In addition, the memory characteristics are studied as a function of ZnO film thickness. The devices exhibit reproducible resistive switching and good retention time, demonstrating their potential for low-cost non volatile memory applications in the future.
Keywords :
MIM devices; aluminium; annealing; random-access storage; sol-gel processing; switching circuits; zinc compounds; Al-ZnO-Al; annealing temperature effect; crystallinity; film thickness; high off-to-on resistance ratio; metal-insulator-metal structure; nonvolatile memory applications; resistive random access memory applications; sol-gel-derived films; unipolar resistive switching devices; Annealing; Crystallization; Electrodes; Random access memory; Telecommunication switching; Temperature; Thermal resistance; Thin film transistors; Voltage; Zinc oxide; Resistance Random Access Memory (RRAM); non-volatile memory; resistive switching; sol-gel; zinc oxide (ZnO) I;
Conference_Titel :
Advances in Computing, Control, & Telecommunication Technologies, 2009. ACT '09. International Conference on
Conference_Location :
Trivandrum, Kerala
Print_ISBN :
978-1-4244-5321-4
Electronic_ISBN :
978-0-7695-3915-7
DOI :
10.1109/ACT.2009.122
