Passivated boron emitters for n-type buried contact solar cells

The emitter saturation current, J_oe, was measured for boron diffused emitters of sheet resistivities ranging from 10 to 4000 Ω/□. Boron tribromide was the diffusion source. The saturation current was measured for SiO₂ passivation. It was found that a forming gas anneal was essential for light diffusions to have a low saturation current. Values for J_oe varied from 1.5-300 fA/cm². The results of the emitter saturation current measurements for boron diffusions are used to model double sided floating junction solar cells that would be made from n-type Cz wafers with a boron diffused emitter