Title :
Can we fabricate efficient white-light InGaN/GaN quantum-well light-emitting diode without using phosphors?
Author :
Yang, C.C. ; Huang, Chi-Feng ; Yeh, Dong-Ming ; Chen, Cheng-Yen ; Lu, Chih-Feng ; Tang, Tsung-Yi ; Huang, Jeng-Jie ; Lu, Yen-Cheng ; Chen, Yung-Shen ; Shiao, Wen-Yu ; Shen, Kun-Ching ; Li, Yun-Li ; Huang, J.J.
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
We report some recent developments in all-semiconductor multi-color and white-light light-emitting diodes. The potential of the development of phosphor-free all-InGaN/GaN quantum-well white-light light-emitting diode will be evaluated.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor diodes; wide band gap semiconductors; InGaN-GaN; all-semiconductor multicolor diode; quantum-well light-emitting diode; Epitaxial growth; Fabrication; Gallium nitride; Indium; Light emitting diodes; Optical devices; Optical mixing; Phosphors; Quantum well devices; Quantum wells;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4453761
