Title :
PECVD single-layer (SiN:H) and double-layer (SiN:H/SiO2) ARC on mono and multicrystalline silicon solar cells
Author :
Abade, Katia Aparecida ; Fonseca, Fernando Josepetti ; Mansano, Ronaldo Domingues ; Abade, Paulo
Author_Institution :
Dept. Eng. de Sistemas Eletronicos, Sao Paulo Univ., Brazil
Abstract :
In this work, we studied PECVD single-layer (SiN:H) and double-layer (SiN:H/SiO2-thin) ARC deposited on mono and multicrystalline Si solar cells. We verified 16-22% increase of cells effective efficiency, due, in its largest part, to the optical effect produced by ARC. Among monocrystalline cells, the most expressive increases were gotten by single-layer ARC, while among the multicrystalline by the double-layer. The thin oxide of double-layer provided larger increase of the intrinsic quantum efficiency inside the bulk of multicrystalline low quality cells (solar-grade silicon), evidencing a larger passivation in this material-as near the junction (5% increase), as in deep region of the cells (20% increase)
Keywords :
antireflection coatings; elemental semiconductors; hydrogen; passivation; silicon; silicon compounds; solar cells; ARC; PECVD single-layer; Si; SiN:H; SiN:H/SiO2; SiO2; anti-reflective coating; double-layer; intrinsic quantum efficiency; low quality cells; monocrystalline silicon solar cells; multicrystalline silicon solar cells; passivation; solar-grade silicon; Annealing; Contamination; MONOS devices; Optical films; Passivation; Photovoltaic cells; Reflectivity; Semiconductor films; Silicon; Thermal conductivity;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915822
