Record cell efficiency on industrial multicrystalline silicon by rapid thermal processing

Author

Noel, S. ; Debarge, L. ; Monna, R. ; Lautenschlager, H. ; Schindle, R. ; Muller, J.C.

Author_Institution

Lab. PHASE, CNRS, Strasbourg, France

fYear

2000

fDate

2000

Firstpage

339

Lastpage

342

Abstract

Simultaneous diffusion of phosphorus and aluminum by rapid thermal processing (RTP) in the order of one minute is used to realize emitter and back surface field in a single high temperature step, with controlled surface concentration of the dopant in order to obtain suitable front surface recombination velocities. Carefully controlling the mentioned parameter on industrial multicrystalline silicon (Polix(R) from Photowatt) lead to 16.7% efficient solar cells on a surface of 25 cm². All results are discussed in terms of photoconductivity decay and quantum efficiency analysis

Keywords

aluminium; diffusion; elemental semiconductors; phosphorus; photoconductivity; rapid thermal processing; semiconductor doping; silicon; solar cells; surface recombination; 1 min; 16.7 percent; Photowatt; Polix; Si:P,Al; aluminum diffusion; back surface field; controlled surface concentration; dopant; emitter; front surface recombination velocities; industrial multicrystalline silicon; phosphorus diffusion; photoconductivity decay; quantum efficiency analysis; rapid thermal processing; simultaneous diffusion; single high temperature step; solar cell efficiency; Aluminum; Annealing; Cooling; Heating; Manufacturing industries; Photovoltaic cells; Radiative recombination; Rapid thermal processing; Silicon; Velocity control;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915832

Filename

915832