Title :
Effective passivation on silicon using low temperature SiNx :H with quick hot steam annealing [solar cells]
Author :
Nagayoshi, Hiroshi ; Inoue, Atsushi ; Abe, Yasuyuki ; Kawaba, Takeshi ; Kamisako, Koichi ; Saitoh, Tadashi
Author_Institution :
Shonan Inst. of Technol., Fujisawa, Japan
Abstract :
Surface passivation on a Si solar cell surface by a combination of low temperature deposited SiNx:H and hot steam post annealing (HSA) has been developed. The HSA allows a quick post annealing within 3 minutes, which was the similar property with hydrogen radical annealing. The effective lifetime of the thermal SiO2 coated sample was greatly increased by HSA, however it was thermally unstable. Low temperature SiNx:H coating on SiO2 greatly improved the thermal passivation stability, and stability against excess annealing. The effective lifetime of SiNx:H direct coated sample was greatly increased by quick HSA and, in addition, showed good thermal stability in spite of low initial lifetime
Keywords :
annealing; elemental semiconductors; hydrogen; passivation; semiconductor doping; silicon; silicon compounds; solar cells; thermal stability; 3 min; Si; Si solar cell; SiN:H; SiO2; effective lifetime; excess annealing stability; hot steam post annealing; hydrogen radical annealing; low temperature deposited SiNx:H; surface passivation; thermal passivation stability; Annealing; Bonding; Coatings; Electromagnetic heating; Hydrogen; Passivation; Plasma temperature; Semiconductor films; Silicon; Thermal stability;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915840
