Title :
Characterization of silicon field effect transistor sub-THz detectors for imaging systems
Author_Institution :
Cellular Sensory & Opt. Wave Comput. Lab., Comput. & Autom. Res. Inst., Budapest, Hungary
Abstract :
This document reports various aspects of silicon field-effect transistor structures response under high frequency continuous wave and pulsed irradiation. The detectors have been manufactured in standard 0.18 um CMOS technology. Their response show formerly predicted behavior and novel effects. Implementing a pair of non-antenna coupled gate is found to increase the sensitivity. Several structures reveal additional effects like polarity change depending on gate source potential and drain current. A responsivity enhancement technique is presented as well in not noise free realistic setups.
Keywords :
CMOS image sensors; MOSFET; elemental semiconductors; silicon; submillimetre wave detectors; submillimetre wave imaging; terahertz wave detectors; terahertz wave imaging; Si; drain current; field effect transistor sub-THz detector; gate source potential; high frequency continuous wave; imaging system; noise free realistic setup; nonantenna coupled gate; pulsed irradiation; responsivity enhancement technique; standard CMOS technology; Detectors; FETs; Imaging; Logic gates; Noise; Silicon;
Conference_Titel :
Circuits and Systems (ISCAS), 2012 IEEE International Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-4673-0218-0
DOI :
10.1109/ISCAS.2012.6272198
