Comparison of non-linear MESFET models over 1-12 GHz frequency range

Author

Castelino, Johncy ; Wong, Phillip ; Sijercic, Edin ; Pejcinovic, Branimir ; Baric, Adrijan

Author_Institution

Dept. of Electr. Eng., Portland State Univ., OR, USA

Volume

2

fYear

2003

fDate

14-17 Dec. 2003

Firstpage

487

Abstract

This paper is an extension of work done previously on the comparison of non-linear MESFET models. The list of models that are compared includes the Curtice quadratic, Curtice cubic, Statz, Materka, and Advanced Materka models to which the Angelov´s model has been added. Furthermore, measurements and model prediction of intermodulation distortion (IMD) are now extended to 12 GHz. The comparison is based on the relative error observed between the measured and simulated DC I-V data, and average error for the model prediction of high frequency gain and IMD. Performance of various models is discussed.

Keywords

Schottky gate field effect transistors; UHF field effect transistors; equivalent circuits; intermodulation distortion; microwave field effect transistors; semiconductor device models; 1 to 12 GHz; Angelov model; Curtice cubic models; Curtice quadratic models; DC I-V data; Materka models; Statz models; equivalent circuit; extrinsic parameters; high frequency gain; intermodulation distortion; model prediction; nonlinear MESFET models; relative error; Circuit simulation; Distortion measurement; Frequency measurement; Gain measurement; Gallium arsenide; Intermodulation distortion; MESFETs; Predictive models; Scattering parameters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 2003. ICECS 2003. Proceedings of the 2003 10th IEEE International Conference on

Print_ISBN

0-7803-8163-7

Type

conf

DOI

10.1109/ICECS.2003.1301828

Filename

1301828