Title :
Role of sodium in the control of defect structures in CIS [solar cells]
Author :
Stanbery, B.J. ; Kincal, S. ; Kim, S. ; Anderson, T.J. ; Crisalle, O.D. ; Ahrenkiel, S.P. ; Lippold, G.
Author_Institution :
Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
The authors have grown CIS epitaxial films on single-crystal GaAs substrates under conditions that enhance the influence of surface effects on the resulting structures and their properties. There is a pronounced morphological dichotomy between indium-rich and copper-rich films. In addition, epilayers with nominally identical compositions and morphologies can exhibit fundamentally different ordering of the lattice in either the equilibrium chalcopyrite (CH) or metastable CuAu (CA) structure. The addition of sodium to In-rich CulnSe2 epilayers during the initial stages of epitaxy both suppresses the formation of metastable Cu-CuInSe2 and dramatically changes the film morphology. They discuss these results in the context of recent theories of island nucleation and their hypothesis that sodium acts as a surfactant during the growth of CuInSe2 by destabilizing the (lnCu+2VCu) defect associate-complex in the near-surface transition layer, rejecting excess indium from the bulk of the growing film
Keywords :
III-V semiconductors; copper compounds; epitaxial growth; gallium arsenide; indium compounds; semiconductor doping; semiconductor growth; semiconductor thin films; sodium; solar cells; ternary semiconductors; CIS defect structures control; CIS epitaxial film growth; CuInSe2-GaAs; Na; film morphology; island nucleation; morphological dichotomy; sodium additive effects; surface effects; surfactant; Computational Intelligence Society; Epitaxial growth; Gallium arsenide; Indium; Inductors; Metastasis; Substrates; Surface morphology; Temperature control; Temperature sensors;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915864