Title :
Characterizing and controlling Cu/(In+Ga) ratio during CIS manufacturing
Author :
Rühle, J. Ulfert ; Wieting, R.D.
Author_Institution :
Siemens Solar Inst., Camarillo, CA, USA
Abstract :
Characterization and control of a key process parameter during CIS manufacturing is described. A model is developed to calculate Cu/(In+Ga) (CIG) ratio changes during sputter deposition runs, as a function of target age, using methods of statistical process control. The model allows prediction of the maximum deposition time permissible while guaranteeing acceptable CIG ratios. Prediction of CIG ratio changes improves productivity by reducing the risk of yield loss caused by unacceptable CIG ratio and increasing the process throughput
Keywords :
chemical variables control; copper compounds; gallium compounds; indium compounds; semiconductor growth; solar cells; sputter deposition; statistical process control; ternary semiconductors; Cu(InGa)Se2; Cu(InGa)Se2 solar cells; Cu/(In+Ga) ratio changes; Cu/(In+Ga) ratio control; maximum deposition time; process parameter control; productivity; sputter deposition; statistical process control; target age; yield loss risk reduction; Computational Intelligence Society; Copper alloys; Gallium alloys; Indium; Manufacturing processes; Predictive models; Process control; Production; Sputtering; Substrates;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915872
