Title :
R-EBIC study of the electrical activity of grain boundaries in CdTe and Cd(S,Te)
Author :
Durose, Ken ; Sadler, James R E ; Yates, Andrew ; Szczerbakow, Andrzej
Author_Institution :
Dept. of Phys., Durham Univ., UK
Abstract :
The remote EBIC (R-EBIC) method has been used to investigate the band bending at crystal boundaries in undoped bulk vapour grown samples of CdTe and CdS0.036Te0.964. For the CdTe samples peak and trough contrast consistent with downward band bending was seen for grain, twin and sub-grain boundaries. This was accentuated near to boundaries with wrong bonds but electrical activity was diminished near to Te inclusions located at such boundaries. For the CdSxTe 1-x samples contrast at twin boundaries consistent with upward band bending was observed. Hence both Te enrichment and the sulphur containing composition x=0.036 are shown associated with electrical activity that is desirable from the standpoint of solar cell operation at least for the bulk samples studied in this work
Keywords :
EBIC; II-VI semiconductors; cadmium compounds; defect states; grain boundaries; inclusions; solar cells; subboundary structure; twin boundaries; CdS0.036Te0.964; CdSxTe1-x; CdTe; R-EBIC method; Te enrichment; Te inclusions; band bending; crystal boundaries; downward band bending; electrical activity; grain boundaries; solar cell operation; sub-grain boundaries; sulphur containing composition; twin boundaries; undoped bulk vapour grown samples; upward band bending; wrong bonds; Bonding; Conducting materials; Electrochemical impedance spectroscopy; Electrons; Grain boundaries; Impurities; Lattices; Photovoltaic cells; Physics; Tellurium;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915878
