Nonlinear optical properties of mixed II-VI compounds

Author

Bala, W.

Author_Institution

Inst. of Phys., N. Copernicus Univ., Torun, Poland

fYear

1999

fDate

1999

Firstpage

121

Abstract

Summary form only given. The dependence of two photon absorption, nonlinear refraction and third order susceptibilities of ZnMgSe layers on Mg content are presented. The absorption is characterized by the transmission of ZnMgSe layers as a function of Mg content and the bandgap energy. In these epitaxial layers, two-photon absorption is observed at 532 nm. The linear absorption is mainly due to the impurity levels in the band gap. Transmission of the epitaxial layers were studied versus input intensity of light

Keywords

II-VI semiconductors; light absorption; light refraction; magnesium compounds; nonlinear optical susceptibility; optical films; semiconductor thin films; two-photon processes; zinc compounds; 532 nm; Mg content; ZnMgSe; ZnMgSe layers; band gap; bandgap energy; epitaxial layers; impurity levels; input light intensity; linear absorption; mixed II-VI compounds; nonlinear optical properties; nonlinear refraction; third order susceptibilities; two photon absorption; two-photon absorption; Absorption; Crystals; Epitaxial layers; Lattices; Nonlinear optical devices; Nonlinear optics; Optical harmonic generation; Optical refraction; Photonic band gap; Physics;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks, 1999. International Conference on

Conference_Location

Kielce

Print_ISBN

0-7803-5637-3

Type

conf

DOI

10.1109/ICTON.1999.781862

Filename

781862