Title :
High speed optoelectronic InP/InGaAs logic pixel
Author :
Kim, Dong-Su ; Dries, J. Chris ; Gokhale, Miling ; Forrest, Stephen R.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
We describe InP/InGaAs optoelectronic smart pixels consisting of monolithically integrated p-i-n photodiodes, heterojunction bipolar transistor (HBT) receivers and transmitters, and surface-bonded folded-cavity surface emitting lasers (FCSELs). A minimum switching energy of 6 fJ, a maximum pixel bandwidth of 800 MHz, and a optoelectronic gain of 3 are achieved. These performance characteristics are competitive or superior to those of all-electronic interconnects
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; integrated optoelectronics; optical interconnections; smart pixels; 6 fJ; 800 MHz; InP-InGaAs; bandwidth; gain; heterojunction bipolar transistor; high speed optoelectronic logic pixel; interconnect; monolithic integration; p-i-n photodiode; receiver; smart pixels; surface-bonded folded-cavity surface emitting laser; switching energy; transmitter; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Logic; Optical crosstalk; Optical receivers; Optical wavelength conversion; PIN photodiodes; Smart pixels; Surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600198
