DocumentCode :
3028931
Title :
Design and characteristics of widely tunable quantum-well heterostructure lasers in the Littman and Metcalf cavity configuration
Author :
Nalivko, S.V. ; Kononenko, V.K. ; Manak, I.S.
Author_Institution :
Belarussian State Univ., Minsk, Byelorussia
fYear :
1999
fDate :
1999
Firstpage :
215
Lastpage :
218
Abstract :
Analysis of light-current and tuning characteristics of a quantum-well laser in an external cavity is performed. The band diagram of the proposed tunable asymmetric multiple quantum-well heterostructure laser source under the forward bias is shown. The heterostructure consists of the GaAs-AlGaAs system
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser tuning; optical design techniques; quantum well lasers; symmetry; GaAs-AlGaAs; GaAs-AlGaAs system; Littman cavity configuration; Metcalf cavity configuration; band diagram; external cavity; forward bias; heterostructure; light-current characteristics; quantum-well laser; tunable asymmetric multiple quantum-well heterostructure laser source; widely tunable quantum-well heterostructure lasers; Coatings; Diode lasers; Laser excitation; Laser modes; Laser tuning; Optical design; Quantum well lasers; Semiconductor lasers; Stimulated emission; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Transparent Optical Networks, 1999. International Conference on
Conference_Location :
Kielce
Print_ISBN :
0-7803-5637-3
Type :
conf
DOI :
10.1109/ICTON.1999.781888
Filename :
781888
Link To Document :
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