DocumentCode :
3029126
Title :
Atmospheric pressure chemical vapor deposition of cadmium telluride-first PV devices
Author :
Kestner, James M. ; Wolden, Colin A. ; Meyers, Peter V. ; Raja, Laxminarayan ; Kee, Robert J.
Author_Institution :
Dept. of Chem. Eng., Colorado Sch. of Mines, Golden, CO, USA
fYear :
2000
fDate :
2000
Firstpage :
595
Lastpage :
598
Abstract :
Atmospheric pressure chemical vapor deposition (APCVD) is being developed for large-area manufacturing of CdTe thin films. This process employs the same deposition chemistry as close-space sublimation, and should therefore yield films with similar properties. Films demonstrating these similarities have been deposited, and devices with NREL-confirmed global AM 1.5 efficiency of 10.6% (787 mV Voc, 21.1 mA/cm 2 Jsc, 0.64 FF) have been fabricated
Keywords :
CVD coatings; II-VI semiconductors; cadmium compounds; chemical vapour deposition; semiconductor device manufacture; semiconductor thin films; solar cells; 10.6 percent; 787 mV; CVD coatings; CdTe; CdTe thin-film solar cells; atmospheric pressure chemical vapor deposition; deposition chemistry; large-area manufacturing; Cadmium compounds; Cascading style sheets; Chemical vapor deposition; Gold; Inductors; Large-scale systems; Photovoltaic cells; Sputtering; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
ISSN :
0160-8371
Print_ISBN :
0-7803-5772-8
Type :
conf
DOI :
10.1109/PVSC.2000.915911
Filename :
915911
Link To Document :
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