Atmospheric pressure chemical vapor deposition of cadmium telluride-first PV devices

Author

Kestner, James M. ; Wolden, Colin A. ; Meyers, Peter V. ; Raja, Laxminarayan ; Kee, Robert J.

Author_Institution

Dept. of Chem. Eng., Colorado Sch. of Mines, Golden, CO, USA

fYear

2000

fDate

2000

Firstpage

595

Lastpage

598

Abstract

Atmospheric pressure chemical vapor deposition (APCVD) is being developed for large-area manufacturing of CdTe thin films. This process employs the same deposition chemistry as close-space sublimation, and should therefore yield films with similar properties. Films demonstrating these similarities have been deposited, and devices with NREL-confirmed global AM 1.5 efficiency of 10.6% (787 mV Voc, 21.1 mA/cm ² J_sc, 0.64 FF) have been fabricated

Keywords

CVD coatings; II-VI semiconductors; cadmium compounds; chemical vapour deposition; semiconductor device manufacture; semiconductor thin films; solar cells; 10.6 percent; 787 mV; CVD coatings; CdTe; CdTe thin-film solar cells; atmospheric pressure chemical vapor deposition; deposition chemistry; large-area manufacturing; Cadmium compounds; Cascading style sheets; Chemical vapor deposition; Gold; Inductors; Large-scale systems; Photovoltaic cells; Sputtering; Substrates; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915911

Filename

915911