Effects of Cu from ZnTe:Cu contacts in CdS/CdTe cells

Author

Gessert, T.A. ; Duda, A. ; Asher, S.E. ; Narayanswamy, C. ; Rose, D.

Author_Institution

NREL, Golden, CO, USA

fYear

2000

fDate

2000

Firstpage

654

Lastpage

657

Abstract

CdS/CdTe devices processed with ZnTe:Cu/Ti back contacts are studied as a function of contact deposition temperature between ~200°C and ~400°C. Both the open-circuit voltage (V_oc) and fill factor (FF) increase with temperature. High-resolution secondary ion mass spectroscopy shows Cu concentration in the CdTe region increases due to CdCl₂ treatment, whereas Cu concentration in the CdS region increases with deposition temperature. Measurements of specific contact resistance suggest that Cu diffusing from the contact interface significantly increases the specific contact resistance at the ZnTe:Cu/Ti interface, resulting in an interface with dominant resistance loss

Keywords

II-VI semiconductors; cadmium compounds; contact resistance; copper; electrical contacts; secondary ion mass spectroscopy; semiconductor device measurement; semiconductor device testing; semiconductor doping; solar cells; vapour deposition; zinc compounds; 200 to 400 C; CdCl₂; CdCl₂ treatment; CdS-CdTe; CdS-CdTe solar cells; ZnTe:Cu; ZnTe:Cu back contacts; contact interface; deposition temperature; dominant resistance loss interface; fill factor; open-circuit voltage; secondary ion mass spectroscopy; specific contact resistance measurements; Chemical analysis; Contact resistance; Electrical resistance measurement; Loss measurement; Mass spectroscopy; Sputter etching; Sputtering; Temperature; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE

Conference_Location

Anchorage, AK

ISSN

0160-8371

Print_ISBN

0-7803-5772-8

Type

conf

DOI

10.1109/PVSC.2000.915929

Filename

915929