Title :
Effects of Cu from ZnTe:Cu contacts in CdS/CdTe cells
Author :
Gessert, T.A. ; Duda, A. ; Asher, S.E. ; Narayanswamy, C. ; Rose, D.
Author_Institution :
NREL, Golden, CO, USA
Abstract :
CdS/CdTe devices processed with ZnTe:Cu/Ti back contacts are studied as a function of contact deposition temperature between ~200°C and ~400°C. Both the open-circuit voltage (Voc) and fill factor (FF) increase with temperature. High-resolution secondary ion mass spectroscopy shows Cu concentration in the CdTe region increases due to CdCl2 treatment, whereas Cu concentration in the CdS region increases with deposition temperature. Measurements of specific contact resistance suggest that Cu diffusing from the contact interface significantly increases the specific contact resistance at the ZnTe:Cu/Ti interface, resulting in an interface with dominant resistance loss
Keywords :
II-VI semiconductors; cadmium compounds; contact resistance; copper; electrical contacts; secondary ion mass spectroscopy; semiconductor device measurement; semiconductor device testing; semiconductor doping; solar cells; vapour deposition; zinc compounds; 200 to 400 C; CdCl2; CdCl2 treatment; CdS-CdTe; CdS-CdTe solar cells; ZnTe:Cu; ZnTe:Cu back contacts; contact interface; deposition temperature; dominant resistance loss interface; fill factor; open-circuit voltage; secondary ion mass spectroscopy; specific contact resistance measurements; Chemical analysis; Contact resistance; Electrical resistance measurement; Loss measurement; Mass spectroscopy; Sputter etching; Sputtering; Temperature; Thin film transistors; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915929
