Title :
Simulation of gate switching characteristics of a miniaturized MOSFET based on a non-isothermal non-equilibrium transport model
Author :
Choi, Won-Cheol ; Kawashima, Hirobumi ; Dang, Ryo
Author_Institution :
Coll. of Eng., Hosei Univ., Tokyo, Japan
Abstract :
Our device simulator is developed for the analysis of a MOSFET based on a thermally coupled energy transport model (TCETM). The simulator has the ability to calculate not only steady-state characteristics but also transient characteristics of a MOSFET. It solves basic semiconductor device equations including the Poisson equation, current continuity equations for electrons and holes, energy balance equation for electrons and heat flow equation, using the finite difference method
Keywords :
MOSFET; digital simulation; finite difference methods; semiconductor device models; transient analysis; MOSFET; Poisson equation; current continuity equations; device simulator; electrons; energy balance equation; finite difference method; gate switching simulation; heat flow equation; nonisothermal nonequilibrium transport model; semiconductor device equations; steady-state characteristics; thermally coupled energy transport model; transient characteristics; Charge carrier processes; Difference equations; Educational institutions; Electrons; Lattices; MOSFET circuits; Poisson equations; Steady-state; Temperature; Thermal conductivity;
Conference_Titel :
Design Automation Conference, 1997. Proceedings of the ASP-DAC '97 Asia and South Pacific
Conference_Location :
Chiba
Print_ISBN :
0-7803-3662-3
DOI :
10.1109/ASPDAC.1997.600203
