Title :
Single-chip condenser microphone using porous silicon as sacrificial layer for the air gap
Author :
Kronast, W. ; Müller, B. ; Siedel, W. ; Stoffel, A.
Author_Institution :
Fachhochschule Furtwangen, Inst. fur Angewandte Forschung, Germany
Abstract :
A single-chip IC-compatible silicon condenser microphone with a highly sensitive silicon nitride membrane and a rigid monocrystalline silicon counterelectrode with acoustic holes was designed and built. Porous silicon with its high dissolution rate in 1% KOH was used as an auxiliary sacrificial layer in combination with sputtered SiO2 to define the air gap. This results in low parasitic capacitances and a microphone structure where the membrane is coplanar with its suspensions. The rigid backelectrode is undistorted, the membrane under low tensile stress, a prerequisite for high sensitivity. Microphones of different dimensions of round and square electrodes with single membranes and membrane arrays were built and packaged in round chip carriers. The open loop sensitivity is in the mV/Pa range depending on the type of microphone. The frequency response goes beyond 25 kHz for an air gap of 1.3 μm
Keywords :
elemental semiconductors; integrated circuit technology; microelectrodes; micromachining; micromechanical devices; microphones; semiconductor technology; silicon; silicon compounds; 1.3 mum; 25 kHz; KOH; Si; Si condenser microphone; Si monocrystalline counterelectrode; Si-SiN; Si-SiO2; SiN membrane; acoustic holes; air gap; coplanar design; frequency response; membrane arrays; microphone structure; open loop sensitivity; porous Si; rigid backelectrode; round chip carriers; round electrodes; sacrificial layer; sputtered SiO2; square electrodes; suspensions; Biomembranes; Electrodes; Etching; Frequency response; Micromachining; Microphone arrays; Parasitic capacitance; Silicon; Suspensions; Tensile stress;
Conference_Titel :
Micro Electro Mechanical Systems, 1998. MEMS 98. Proceedings., The Eleventh Annual International Workshop on
Conference_Location :
Heidelberg
Print_ISBN :
0-7803-4412-X
DOI :
10.1109/MEMSYS.1998.659824