Title :
A trapped charge model for the transient effect in CIGS solar cells
Author :
Cuiffi, Joseph D. ; Zhu, Hong ; Fonash, Stephen J.
Author_Institution :
Facility of Nanofabrication, Pennsylvania State Univ., University Park, PA, USA
Abstract :
The authors present a model for the transient effects observed in CIGS based solar cells. By considering charge trapping and de-trapping in the CdS layer of the structure, they provide a mechanism for the observed cyclic performance changes. To complement the physical model, an AMPS computer model of a CIGS device was created and used to show that the effects of trapped charge correspond to the experimentally measured changes. The charge buildup in the CdS region is shown to reduce only the fill factor of devices, and as the computer model shows, this effect may be alleviated with higher n-type doping in the CdS layer
Keywords :
copper compounds; electronic engineering computing; gallium compounds; indium compounds; semiconductor device models; software packages; solar cells; trapped ions; AMPS computer model; CdS; CdS layer; Cu(In,Ga)Se2 solar cells; Cu(InGa)Se2; charge buildup; charge trapping; cyclic performance changes; de-trapping; fill factor; transient effects; trapped charge model; Buffer layers; Charge measurement; Conducting materials; Current measurement; Doping; Nanofabrication; Photovoltaic cells; Physics computing; Semiconductor process modeling; Temperature;
Conference_Titel :
Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE
Conference_Location :
Anchorage, AK
Print_ISBN :
0-7803-5772-8
DOI :
10.1109/PVSC.2000.915954
